| PART |
Description |
Maker |
| IRFB4310GPBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRFB4321GPBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRLRU3103PBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRF3717 |
HEXFETPower MOSFET
|
IRF[International Rectifier]
|
| IRFZ44VZSPBF |
HEXFETPower MOSFET ( VDSS = 60V , RDS(on) = 12m, ID = 57A )
|
International Rectifier
|
| IRLML0030TRPBF |
HEXFETpower MOSFET Compatible with existing Surface Mount Techniques Lower switching losses
|
TY Semiconductor Co., Ltd
|
| IRF7342PBF |
HEXFETPower MOSFET (VDSS = -55V , RDS(on) = 0.105 ㈢的HEXFET功率MOSFET（减振钢板基本\u003d - 55V的，的RDS（on）\u003d 0.105ヘ）
|
International Rectifier, Corp.
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| IRFB4310PBF IRFS4310PBF IRFSL4310PBF IRFS4310RPBF |
HEXFET㈢Power MOSFET
HEXFET庐Power MOSFET
HEXFET?Power MOSFET
High Efficiency Synchronous Rectification in SMPS
|
International Rectifier
|
| VMO550-01F |
HiPerFET MOSFET Module 590 A, 100 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET
MOSFET Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| SCH2815 |
MOSFET : N-Channel Silicon MOSFET MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| IXTA10N60P IXTP10N60P IXTI10N60P |
MOSFET N-CH 600V 10A D2-PAK 10 A, 600 V, 0.74 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
PolarHV Power MOSFET
|
Infineon Technologies AG
IXYS CORP
IXYS Corporation
|
